? semiconductor components industries, llc, 2009 october, 2009 ? rev. 4 1 publication order number: mbt2222adw1t1/d MBT2222ADW1T1G general purpose transistor npn silicon features ? moisture sensitivity level: 1 ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base v oltage v cbo 75 vdc emitter ? base v oltage v ebo 6.0 vdc collector current ? continuous i c 600 madc electrostatic discharge esd hbm class 2 mm class b thermal characteristics characteristic symbol max unit total package dissipation (note 1), t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage t emperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. device package shipping ? ordering information marking diagram q 1 (1) (2) (3) (4) (5) (6) q 2 sc ? 88/sc70 ? 6/sot ? 363 case 419b style 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d. 1 http://onsemi.com 1p m 1 6 MBT2222ADW1T1G sot ? 363 (pb ? free) 3000 / tape & reel 1p = specific device code m = date code = pb ? free package (note: microdot may be in either location)
MBT2222ADW1T1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown v oltage (i c = 10 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown v oltage (i c = 10 adc, i e = 0) v (br)cbo 75 ? vdc emitter ? base breakdown v oltage, (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i cex ? 10 nadc collector cutoff current (v cb = 60 vdc, i e = 0) (v cb = 60 vdc, i e = 0, t a = 125 c) i cbo ? ? 0.01 10 adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i bl ? 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = ? 55 c) (i c = 150 madc, v ce = 10 vdc) (note 2) (i c = 150 madc, v ce = 1.0 vdc) (note 2) (i c = 500 madc, v ce = 10 vdc) (note 2) h fe 35 50 75 35 100 50 40 ? ? ? ? 300 ? ? ? collector ? emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.3 1.0 vdc base ? emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 ? 1.2 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (note 3) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h ie 2.0 0.25 8.0 1.25 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h re ? ? 8.0 4.0 x 10 ? 4 small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h fe 50 75 300 375 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h oe 5.0 25 35 200 mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) rb, c c ? 150 ps noise figure (i c = 100 adc, v ce = 10 vdc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = 30 vdc, v be(off) = ? 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 10 ns rise time t r ? 25 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 60 2. pulse test: pulse width 300 s, duty cycle 2.0%. 3. f t is defined as the frequency at which |h fe | extrapolates to unity.
MBT2222ADW1T1G http://onsemi.com 3 figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 125 c t j = 25 c 25 c -55 c i c = 1.0 ma 10 ma 150 ma 500 ma v ce = 1.0 v v ce = 10 v
MBT2222ADW1T1G http://onsemi.com 4 figure 5. turn ? on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ? off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current ? gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
MBT2222ADW1T1G http://onsemi.com 5 figure 11. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500
MBT2222ADW1T1G http://onsemi.com 6 package dimensions sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mbt2222adw1t1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca sales representative
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